Abstract: In this article, we present a symmetric surface-potential-based model for dynamic depletion (DD) device operation of silicon-on-insulator (SOI) FETs for RF and analog IC design applications.
Introduction: The Noble Goal and The Hard Reality In 2017, Ghana took a bold step toward educational equity with the ...
Storytelling and hands-on activities have been woven together in the second part of the revised NCERT Mathematics textbook ...
Abstract: With the advancement of the industrial Internet of Things, minimizing delay has become a critical performance metric for many industrial applications. Edge computing effectively addresses ...
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