Science Daily

GaN-on-Silicon for scalable high electron mobility transistors

Scientists have advanced gallium nitride (GaN)-on-silicon transistor technology by optimizing the composition of the semiconductor layers that make up the device. The team created the high electron ...
Semiconductor Engineering

Improved Performance of GaN-Based Ultraviolet LEDs with the Stair-like Si-Doping n-GaN Structure

“A method to improve the performance of ultraviolet light-emitting diodes (UV-LEDs) with stair-like Si-doping GaN layer is investigated. The high-resolution X-ray diffraction shows that the UV-LED ...
Electronic Design

Trading Si LDMOS for GaN in Switch-Mode Power Circuits

Power gallium-nitride (GaN) FETs have been available for several years now, but some engineers have been slow to adopt them in power equipment despite their superior characteristics. Getting ...
Nanowerk

Advancing GaN-on-Silicon for scalable high electron mobility transistors

(Nanowerk News) A team of researchers at the University of Illinois at Urbana-Champaign has advanced gallium nitride (GaN)-on-silicon transistor technology by optimizing the composition of the ...
EurekAlert!

Illinois team advances GaN-on-Silicon for scalable high electron mobility transistors

A team of researchers at the University of Illinois at Urbana-Champaign has advanced gallium nitride (GaN)-on-silicon transistor technology by optimizing the composition of the semiconductor layers ...